130. J. L. Freeouf, A. C. Warren, P. D. Kirchner, J. M. Woodall, and M. R. Melloch, "Surface Fermi Level Engineering: Or There’s More to Schottky Barriers than Just Making Diodes and Field Effect Transistor Gates," J. Vac. 143. S. Chang, J. L. Shaw, R. E. Viturro, L. J. Brillson, P. D. Kirchner and J. M. Woodall, "Temperature-Dependent Formation of Interface States and Schottky Barriers at Metal/MBE GaAs (100) Junctions," J. Vac. 158. J. L. Freeouf, J. M. Woodall, L. J. Brillson, and R. E. Viturro, "Metal/(100) GaAs Interface: Case for a Metal-Insulator-Semiconductor-like Structure," Appl. 46 Mahamandir Shiva Temple at Mahamandir near Jodhpur in Rajasthan: A 100 pillared Shiva Temple. At the age of 36, he journeyed to England and enrolled at the Middle Temple in London. 129. Y. Yin, D. Yan, F. H. Pollak, G. D. Pettit and J. M. Woodall, "Observation of Franz-Keldysh Oscillations in the Stress-Modulated Spectra of (001) n-type GaAs," Phys. 128. Z.Hang, D. Yan, F.H. One of the primary responsibilities of this leadership is to ensure that universities continue to improve on their operational efficiency.
Due to all this he soon assumed leadership in his new area of work and then he was once again coopted to the Burdwan Regional Committee in the early ’73. T. J. de Lyon, J. M. Woodall, M. S. Goorsky, and P. D. Kirchner, "Lattice-Contraction due to Carbon Doping of GaAs Grown by Metalorganic Molecular Beam Epitaxy," Appl. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, "Arsenic Precipitates and the Semi-Insulating Properties of GaAs Buffer Layers Grown by Low Temperature Molecular Beam Epitaxy," Appl. D. Kuchta, J. R. Whinnery, J. S. Smith, J. M. Woodall and D. Pettit, "Improved Contacts to Semi-Insulating GaAs Photoconductive Switches using a Graded Layer of InGaAs," Appl. S. Chang, L. J. Brillson, D. F. Rioux, Y. J. Kime, P. D. Kirchner, G. D. Pettit, mahadev 66 (forum.issabel.org) and J. M. Woodall, "Metal/GaAs Interface Chemical and Electronic Properties: GaAs Orientation Dependence," J. Vac. S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, "Correlation of Interfacial Chemistry, Barrier Height, and Step-Density for Al on GaAs (100) Vicinal Surfaces," J. Vac.
R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L. J. Brillson, A. Terrasi, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, "Low Temperature Formation of Metal/Molecular Beam Epitaxy-GaAs (100) Interfaces: Approaching Ideal Chemical and Electronic Limits," J. Vac. S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall, and M. H. Hecht, "Confirmation of Temperature-Dependent Photovoltaic Effect on Fermi Level Measurements by Photoemission Spectroscopy," Phys. J. M. Woodall, R. T. Hodgson, and R. L. Gunshor, "Low Resistivity P-Type ZnSe Through Surface Fermi Level Engineering," Appl. A. C. Warren, J. H. Burroughes, J. M. Woodall, D. T. McInturff, R. T. Hodgson, and M. R. Melloch, "1.3 Micron PiN Photodetector Using GaAs with As Precipitates (GaAs:As)," IEEE Elect. T. J. de Lyon, J. M. Woodall, D. T. McInturff, P. D. Kirchner, J. A. Kash, R. J. S. Bates, R. T. Hodgson, and F. Cardone, "High Frequency Operation of Heavily Carbon-Doped Ga0.51In0.49P/GaAs Surface-Emitting LEDs Grown by Metalorganic Molecular Beam Epitaxy," Appl. 133. T. J. de Lyon, N. I. Buchan, P. D. Kirchner, J. M. Woodall, D. T. McInturff, G. J. Scilla, and F. Cardone, "Use of CCl4 and CHCl3 in Gas Source Molecular Beam Epitaxy for Carbon Doping of GaAs and GaxIn1-xP," J. Crystal Growth, 111, 1991, p.
134. M. R. Melloch, K. Mahalingam, N. Otsuka, J. M. Woodall, and A. C. Warren, "GaAs Buffer Layers Grown at Low Substrate Temperatures Using As2 and the formation of Arsenic Precipitates," J. Crystal Growth, 111, 1991, p. 149. M. R. Melloch, N. Otsuka, J. M. Woodall, A. C. Warren, and J. L. Freeouf, "Formation of Arsenic Precipitates in GaAs Buffer Layers Grown by MBE at Low Substrate Temperatures," Appl. A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, and N. Otsuka, "Subpicosecond, Freely-Propagating Electromagnetic Pulse Generation and Detection Using GaAs:As," Appl. K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, and A. C. Warren, "Substrate Temperature Dependence of Arsenic Precipitate Formation in GaAlAs and GaAs, J. Vac. 117. Y. S. Huang, H. Qiang, F. H. Pollak, G. D. Pettit, P. D. Kirchner, J. M. Woodall, H. Stragier, and L. B. Sorensen, "Temperature Dependence of the Photoreflectance of a Strained Layer In0.21Ga0.79As/GaAs Single Quantum Well," J. Appl. 122. H. Qiang, F. H. Pollak, C. Mailhiot, G. D. Pettit, and J. M. Woodall, "Externally Generated Piezoelectric Effect in Semiconductor Microstructures," Phys.