29. L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, "Fermi Level Pinning and Chemical Interactions at Metal-InxGa1-xA (100) Interfaces," J. Vac. 14. L. J. Brillson, R. E. Viturro, C. Mailhiot, J. L. Shaw, N. Tache, J. McKinley, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, "Unpinned Schottky Barrier Formation at Metal-GaAs Interfaces" J. Vac. L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, "Absence of Fermi Level Pinning at Metal-InGaAs(100) Interfaces," Appl. S. D. Offsey, J. M. Woodall, A. C. Warren, P. D. Kirchner, T. I. Chappell, and G. D. Pettit, "Unpinned (100) GaAs Surfaces in Air Using Photochemistry," Appl. 38. A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.-F. A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.-F. 35. K. L. Kavanagh, J. W. Mayer, C. W. Magee, J. Sheets, J. Tong, P. D. Kirchner and J. M. Woodall, "The Polycrystalline-Si Contact to GaAs," J. Electrochem.
P. E. Batson, K. L. Kavanagh, J. M. Woodall, and J. W. Mayer, "Electron-Energy-Loss Scattering Near a Single Misfit Dislocation at the GaAs/GaInAs Interface," Phys. 36. K. L. Kavanagh, J. W. Mayer, C. W. Magee, J. Sheets, J. Tong, and J. M. Woodall, "Silicon Diffusion at Poly-Si/GaAs Interfaces," Appl. K. L. Kavanagh, M. A. Capano, L. W. Hobbs, J. C. Barbour, P. M. J. Marée, W. Schaff, mahadev cricket online id (setiathome.berkeley.edu) J. W. Mayer, D. Pettit, J. M. Woodall, J. A. Stroscio, and R. M. Feenstra, "Asymmetries in Dislocation Densities, Surface Morphology and Strain of GaInAs/GaAs Single Heterolayers," J. Appl. 13. M. D. Pashley, K. W. Haberern and J. M. Woodall, "The (001) Surface of Molecular-Beam Epitaxially Grown GaAs Studied by Scanning Tunnelling Microscopy," J. Vac. 42. J. M. Woodall and J. L. Freeouf, "Summary Abstract: Surface Treatment and Interface Properties: What Really Matters? G. D. Pettit, J. M. Woodall, S. L. Wright, P. D. Kirchner, and J. L. Freeouf, "Summary Abstract: The MBE Growth of GaAs Free of Oval Defects," J. Vac. A. H. Bond, P. Parayanthal, F. H. Pollak and J. M. Woodall, "Direct Measurement of Proton Straggling in GaAlAs for Nuclear Profiling," J. Appl. G. Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, and J. M. Woodall, "Phonon Shifts and Strains in Strain-Layered GaInAs," Appl.
Woodall, "Effect of Iso-electronic Dopants on the Dislocation Density of GaAs," J. Electron. 30. J. M. Woodall, P. D. Kirchner, G. D. Pettit, and J. J. Rosenberg, "Pseudomorphic GaInAs/GaAs Single Quantum Well Structures with High Electron Mobility," Surf. D. L. Rogers, J. M. Woodall, D. G. Pettit, and D. T. McInturff, "High Performance, 1.3 Micron, GaInAs Detectors Fabricated on GaAs Substrates," IEEE Electron Dev. A. C. Warren, J. M. Woodall, E. R. Fossum, G. D. Pettit, P. D. Kirchner, and D. T. McInturff, "Masked, Anisotropic Thermal Etching and Regrowth for in-situ Patterning of Compound Semiconductors," Appl. 41. H. J. Hoffmann and J. M. Woodall, "Photo-Enhanced Etching of n-Si," Appl. 46. P. Oelhafen, J. L. Freeouf, G. D. Pettit, and J. M. Woodall, "Elevated Temperature Low Energy Ion Cleaning of GaAs," J. Vac. A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and D. P. Kern, "n-InAs/GaAs Heterostructure Superconducting Weak Links with Nb Electrodes," Appl. 25. A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and D. P. Kern, "Semiconductor Heterostructure Weak Links for Josephson and Superconducting FET Applications," IEEE Trans. Magnetics, MAG-23, 1987, p.
9. R. E. Viturro, J. L. Shaw, L. J. Brillson, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, "Arsenic-and Metal-Induced GaAs Interface States by Low Energy Cathodoluminescence Spectroscopy," J. Vac. H. Shen, Z. Hang, S. H. Pan, F. H. Pollak, and J. M. Woodall, "Dependence of the Photoreflectance of Semi-Insulating GaAs on Temperature and Pump Chopping Frequency," Appl. 8. C. W. Wilmsen, P. D. Kirchner, and J. M. Woodall, "Effects of N2, O2, H2O on GaAs Passivated by Photowashing or Coating with Na2 S:9H2O," J. Appl. 20. P. D. Kirchner, A. C. Warren, J. M. Woodall, C. W. Wilmsen, S. L. Wright, and J. M. Baker, "Oxide Passivation of Photochemically Unpinned GaAs," J. Electrochem. H. Shen, F. H. Pollak, J. M. Woodall, R. N. Sacks, "Electric Field Distributions in a Molecular-Beam-Epitaxy GaAlAs/GaAs/GaAs Structure Using Photoreflectance," J. Vac. InGaAs/nGaAs Heterojunction Schottky Diodes with Low Barriers Controlled by Band Offset and Doping Level," J. Vac. InGaAs/n-GaAs Pseudomorphic Heterojunction Schottky Diodes," Appl. P. D. Kirchner, T. N. Jackson, G. D. Pettit, and J. M. Woodall, "Low-Resistance Nonalloyed Ohmic Contacts to Si-Doped Molecular Beam Epitaxial GaAs," Appl. 34. J. L. Freeouf and J. M. Woodall, "Defective Heterojunction Models," Surf.